rd15hvf1 - RD15HVF1 is a silicon MOSFET power tsukurimasu transistor for VHFUHF high power amplifiers It has high output power gain and efficiency and can operate at 175MHz and 520MHz with 15W input power 36V72V125V Operation RF High Power MOS FET Discrete 72V96V125V Operation RF High Power MOS FET Module RD15HVF1 is a MOS FET type transistor specifically designed for VHFUHF High power amplifiers applications FEATURES High power and High Gain Pout15W Gp14dB Vdd125Vf175MHz Pout15W Gp7dB Vdd125Vf520MHz High Efficiency 60typ on VHF Band High Efficiency 55typ on UHF Band APPLICATION For output stage of high power amplifiers The RD15HVF1 from Mitsubishi Electric US Inc is a RF Transistor with Frequency DC to 175 MHz Gain 14 dB Supply Voltage 125 V Input Power 06 W Storage Temperature 40 to 150 Degree C Tags Flanged More details for RD15HVF1 can be seen below RD15HVF1 transistor equivalent silicon mosfet power transistor Download Size 43202KB RD15HVF1 Datasheet 10 Features and benefits RD15HVF1 MITSUBISHI ELECTRIC US Inc Semiconductors and RD15HVF1 DatasheetPDF Mitsubishi Electric Semiconductor RD15HVF1 DatasheetPDF Mitsubishi Electric Semiconductor MITSUBISHI RF POWER MOS FETELECTROSTATIC SENSITIVE DEVICERD15HVF1RoHS Compliance Silicon MOSFET Power Transistor 175MHz520MHz15WRD15HVF1MITSUBISHI ELECTRIC10 Jan 2006OBSERVE HANDLING PRECAUTIONSABSOLUTE MAXIMUM RATINGSTc25C UNLESS OTHERWISE NOTED Datasheet search datasheets Datasheet search site for Electronic Components and Semiconductors integrated circuits diodes triacs and RD15HVF1 Overview Mitsubishi Electrics lineup of High Power Si MOS FET discrete and module products are suitable for frequency ranges from 30MHz to 1GHz and MITSUBISHI RF POWER MOS FET RD15HVF1 Free Radio Mitsubishi RD15HVF1 LDMOS model qslnet RD15HVF1 Datasheet Mitsubishi Electric Semiconductor RD15HVF1 is a MOS FET type transistor specifically designed for VHFUHF High power amplifiers applications FEATURES High power and High Gain Pout15W Gp14dB Vdd125Vf175MHz Pout15W Gp7dB Vdd125Vf520MHz High Efficiency 60typ on VHF Band High Efficiency 55typ on UHF Band RD15HVF1 531Kb 10P RoHS Compliance Silicon MOSFET Power Transistor 175MHz520MHz15W RD16HHF1 314Kb 8P RF POWER MOS FET Silicon MOSFET Power Transistor 30MHz16W RD15HVF1 datasheet59 Pages MITSUBISHI Silicon MOSFET Videos for Rd15hvf1 Feb 14 2022 Description RD15HVF1 is a MOS FET type transistor specifically designed for VHFUHF High power amplifiers applications Features 1 High power and High Gain 1 Pout15W Gp14dB Vdd125Vf175MHz RD15HVF1 DatasheetPDF Mitsubishi Electric Semiconductor MITSUBISHI RF kode pos mekarjaya depok POWER MOS FET RD15HVF1 RF Parts RD15HVF1 datasheet DigChip RD15HVF1501 RoHS Compliance Silicon MOSFET Power Transistor RD15HVF1 Datasheet PDF 30V RF Power MOSFET RD15HVF1 RoHS Compliance Silicon MOSFET Power Transistor RD15HVF1 RoHS Compliance Silicon MOSFET Power Transistor 175MHz520MHz15W DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHFUHF High power amplifiers applications FEATURES High power and High Gain Pout15W Gp14dB Vdd125Vf175MHz Pout15W Gp7dB Vdd125Vf520MHz High Efficiency 60typ on VHF Band Apr 22 2013 A web page that describes the smallsignal model of the Mitsubishi RD15HVF1 LDMOS transistor a medium power device for amateur radio It shows the extracted parameters the equivalent circuit and the Sparameters fitting details RD15HVF1 DatasheetPDF Mitsubishi Electric Semiconductor Silicon RF Power MOS FET Discrete RD15HVF1 RD15HVF1 is a MOS FET type transistor specifically designed for VHFUHF High power amplifiers applica tions OUTLINE DRAWING High power and High Gain Gpgt7dB Vdd125Vf520MHzHigh Efficiency 60typ on VHF BandHigh Efficiency 55typ on UHF Band RD15HVF1 is a silicon MOSFET power transistor with 15W output power and 175MHz to 520MHz frequency range Download the PDF datasheet to see the typical characteristics dimensions test circuit and similar parts Product Lineup High Frequency Devices Mitsubishi Electric RD15HVF1 is a MOSFET power transistor for VHFUHF high power amplifiers Download the PDF datasheet or view the HTML version with features specifications and applications RD15HVF1501 Mitsubishi MOSFET Power Transistor 175MHz 520MHz 15w MFR Mitsubishi Japan DESCRIPTION RD15HVF1501 is a MOS FET Silicon type transistor specifically designed for VHFUHF High power amplifiers applications FEATURES High power and High Gain Pout15W Gp14dB Vdd125V f175MHz Pout15W Gp7dB Vdd125Vf520MHz RD15HVF1 Silicon MOSFET Power Transistor 175MHz15W 520MHz15W RD15HVF1 MITSUBISHI ELECTRIC REV1 14 May 2003 17 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHFUHF High power amplifiers applica tions FEATURES High power and High Gain RD15HVF1 Mitsubishi Electric US Inc RF Transistor RD15HVF1 406Kb 9P Silicon MOSFET Power Transistor 175MHz520MHz15W RD15HVF1 334Kb 10P Silicon MOSFET Power Transistor 175MHz520MHz15W RD15HVF1 408Kb 9P RF POWER MOS FET Silicon MOSFET Power Transistor 175MHz520MHz15W RD00HVS1 173Kb 6P RoHS Compliance Silicon MOSFET Power Transistor 175MHz05W RD00HVS1 141Kb 7P RoHS RD15HVF1 datasheet29 pemain bola no punggung 3 Pages MITSUBISHI Silicon MOSFET
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